Review

Introduction

Program Committee

Topics

Selected Papers

Alph. Author Index

Sponsors

Local Organ. Committee

Contacts

Program Committee

B. Michel Fraunhofer Institute IZM Berlin, Germany   -General Chair-

H.-J. Fecht University Ulm, Germany

M. Werner Deutsche Bank Berlin, Germany

International Program Committee

E. Arzt Max-Planck Institute Stuttgart, Institute for Metal Research, Germany

D. Aurich Federal Institute for Materials Research and Testing (BAM) Berlin, Germany

M. Bauer Fraunhofer Institute IZM Berlin/EPC Teltow, Germany

W. M. Beckenbaugh Motorola, Tempe, USA

L. Berka CTU Prague, Czech Republic

I. M. Buckley-Golder AEA Technology, Harwell, U.K.

S. Büttgenbach Technical University Braunschweig, Germany

W. T. Chen National University of Singapore, Singapore

D. L. Dreifus Electronics Materials Center, Kobe Steel Inc., Research Triangle Park, USA

C. Drevon Alcatel Espace, Toulouse, France

J. Dual ETH Zurich, Switzerland

W. Ehrfeld Institute for Microtechnique (IMM) Mainz, Germany

W. R. Fahrner University Hagen, Germany

T. Fukuda Nagoya University, Japan

H. H. Gatzen University Hannover, Germany

T. Gessner Chemnitz University of Technology, Chemnitz, Germany

H. Gleiter Research Center Karlsruhe, Germany

W. Grünwald Robert Bosch GmbH, Stuttgart, Germany

W. Hager DaimlerChrysler Aerospace AG, Ulm, Germany

A. Inoue Tohoku University, Sendai, Japan

C. Johnston AEA Technology, Harwell, U.K.

B. Kämpfe Fraunhofer Institute IZM Berlin, Germany

K. Kempter Siemens AG Munich, Germany

K. Kishimoto Tokyo Institute of Technology, Japan

J. Liu The Swedish Institute for Production Engineering, Mölndal, Sweden

J. Lu Université de Technology de Troyes, France

R. Maeda AIST, Miti, Tsukuba, Japan

P. Mayr Institute of Materials Technology (IWT) Bremen, Germany

N. Meyendorf Fraunhofer Institute IzfP Saarbrucken, Germany

N. F. Morozov St. Petersburg University, Russia

J. Morris State University of New York, Binghamton, USA

D. Munz Research Center Karlsruhe, Germany

M. A. Nicolet California Institute of Technology, Pasadena, USA

K. Nihei Oki Electric Industry Co., Tokyo, Japan

A. Ourmazd Institute for Semiconductor Physics Frankfurt/O., Germany

P. D. Portella Federal Institute for Materials Research and Testing (BAM) Berlin, Germany

T. Rang Technical University Tallinn, Estonia

E. Reese W.C. Heraeus GmbH Hanau, Germany

H. Reichl Fraunhofer Institute IZM Berlin, Germany

J. Roggen I.M.E.C. Leuven, Belgium

N. F. de Rooij University Neuchâtel, Switzerland

H. P. Rossmanith Technical University Vienna, Austria

H. Schmidt Institute for New Materials (INM) Saarbrucken, Germany

M. Schneider VDI/VDE-IT Teltow, Germany

E. Seitz Research Center Juelich, Germany

G. Sepold BIAS Bremen, Germany

R. W. Siegel Rensselaer Polytechn. Institute, Troy, USA

E. Sommer Fraunhofer Institute IWM Freiburg, Germany

T. A. Sørensen Danfoss A/S, Gråsten, Denmark

H. Sturm VDI/VDE-IT, Germany

T. Suga University of Tokyo, Japan

E. Suhir Bell Labs, Lucent Technol., Murray Hill, USA

A. A. O. Tay National University of Singapore, Singapore

C. V. Thompson M.I.T. Cambridge, USA

W. Totzauer HTW Mittweida, Germany

R. R. Tummala Georgia Institute of Technology, Atlanta, USA

J. Villain University of Augsburg (FH), Germany

B. Weiss University of Vienna, Austria

T. Winkler CWM GmbH Chemnitz, Germany, Secretary

E. Wolfgang Siemens AG Munich, Germany

K.-J. Wolter Technical University Dresden, Germany

S. W. Yu Tsinghua University Beijing, P.R. China

E. Zakel Pac Tech GmbH Falkensee, Germany

Z. X. Fu Fudan University, Shanghai, P.R. China